SEMI OpenIR  > 半导体集成技术工程研究中心
基于锥形衬底的相变存储器的制备方法
付英春; 马刘红; 杨富华; 王晓峰; 周亚玲; 杨香; 王晓东
Rights Holder中国科学院半导体所
Date Available2016-09-12
Country中国
Subtype发明
Subject Area微电子学
Application Date2015-12-03
Application NumberCN201510881248.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27407
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
付英春,马刘红,杨富华,等. 基于锥形衬底的相变存储器的制备方法.
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基于锥形衬底的相变存储器的制备方法.pd(523KB) 限制开放LicenseApplication Full Text
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