SEMI OpenIR  > 中科院半导体照明研发中心
倒装结构的氮化镓基高电子迁移率晶体管的制作方法
纪攀峰; 谢海忠; 梁萌; 马平; 张韵; 王军喜; 李晋闽
Rights Holder中国科学院半导体所
Date Available2016-08-30
Country中国
Subtype发明
Subject Area半导体器件
Application Date2014-12-24
Application NumberCN201410816563.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27213
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
纪攀峰,谢海忠,梁萌,等. 倒装结构的氮化镓基高电子迁移率晶体管的制作方法.
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