| Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets | |
| Yingdong Tian; Yun Zhang; Jianchang Yan; Xiang Chen; Junxi Wang; Jinmin Li | |
| 2016-05-18 | |
| Source Publication | RSC Advances
 |
| Volume | 6Issue:55Pages:50245-50249 |
| Subject Area | 半导体物理 ; 半导体材料 ; 半导体器件 ; 光电子学 |
| Indexed By | SCI |
| Date Available | 2016-06-01 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27152 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Yingdong Tian,Yun Zhang,Jianchang Yan,et al. Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets[J]. RSC Advances,2016,6(55):50245-50249. |
| APA | Yingdong Tian,Yun Zhang,Jianchang Yan,Xiang Chen,Junxi Wang,&Jinmin Li.(2016).Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets.RSC Advances,6(55),50245-50249. |
| MLA | Yingdong Tian,et al."Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets".RSC Advances 6.55(2016):50245-50249. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Yingdong Tian-2016-S（636KB） | 限制开放 | License | Application Full Text | |||
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