Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets | |
Yingdong Tian; Yun Zhang; Jianchang Yan; Xiang Chen; Junxi Wang; Jinmin Li | |
2016-05-18 | |
Source Publication | RSC Advances
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Volume | 6Issue:55Pages:50245-50249 |
Subject Area | 半导体物理 ; 半导体材料 ; 半导体器件 ; 光电子学 |
Indexed By | SCI |
Date Available | 2016-06-01 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/27152 |
Collection | 中科院半导体照明研发中心 |
Recommended Citation GB/T 7714 | Yingdong Tian,Yun Zhang,Jianchang Yan,et al. Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets[J]. RSC Advances,2016,6(55):50245-50249. |
APA | Yingdong Tian,Yun Zhang,Jianchang Yan,Xiang Chen,Junxi Wang,&Jinmin Li.(2016).Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets.RSC Advances,6(55),50245-50249. |
MLA | Yingdong Tian,et al."Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets".RSC Advances 6.55(2016):50245-50249. |
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Yingdong Tian-2016-S(636KB) | 限制开放 | License | Application Full Text |
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