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Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets
Yingdong Tian; Yun Zhang; Jianchang Yan; Xiang Chen; Junxi Wang; Jinmin Li
2016-05-18
Source PublicationRSC Advances
Volume6Issue:55Pages:50245-50249
Subject Area半导体物理 ; 半导体材料 ; 半导体器件 ; 光电子学
Indexed BySCI
Date Available2016-06-01
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27152
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Yingdong Tian,Yun Zhang,Jianchang Yan,et al. Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets[J]. RSC Advances,2016,6(55):50245-50249.
APA Yingdong Tian,Yun Zhang,Jianchang Yan,Xiang Chen,Junxi Wang,&Jinmin Li.(2016).Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets.RSC Advances,6(55),50245-50249.
MLA Yingdong Tian,et al."Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets".RSC Advances 6.55(2016):50245-50249.
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