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High Quantum Efficiency and Low Droop of 400-nm InGaN Near-Ultraviolet Light-Emitting Diodes Through Suppressed Leakage Current
Panpan Li; Hongjian Li; Liancheng Wang; Xiaoyan Yi; Guohong Wang
2015
Source PublicationIEEE JOURNAL OF QUANTUM ELECTRONICS
Volume51Issue:9Pages:3300605
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2016-04-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27031
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Panpan Li,Hongjian Li,Liancheng Wang,et al. High Quantum Efficiency and Low Droop of 400-nm InGaN Near-Ultraviolet Light-Emitting Diodes Through Suppressed Leakage Current[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS,2015,51(9):3300605.
APA Panpan Li,Hongjian Li,Liancheng Wang,Xiaoyan Yi,&Guohong Wang.(2015).High Quantum Efficiency and Low Droop of 400-nm InGaN Near-Ultraviolet Light-Emitting Diodes Through Suppressed Leakage Current.IEEE JOURNAL OF QUANTUM ELECTRONICS,51(9),3300605.
MLA Panpan Li,et al."High Quantum Efficiency and Low Droop of 400-nm InGaN Near-Ultraviolet Light-Emitting Diodes Through Suppressed Leakage Current".IEEE JOURNAL OF QUANTUM ELECTRONICS 51.9(2015):3300605.
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