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Excellent ESD Resistance Property of InGaN LEDs With Enhanced Internal Capacitance
Panpan Li; Hongjian Li; Yongbing Zhao; Junjie Kang; Zhicong Li; Zhiqiang Liu; Xiaoyan Yi; Jinmin Li; Guohong Wang
2015
Source PublicationIEEE PHOTONICS TECHNOLOGY LETTERS
Volume27Issue:19Pages:2004-2006
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2016-04-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27030
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Panpan Li,Hongjian Li,Yongbing Zhao,et al. Excellent ESD Resistance Property of InGaN LEDs With Enhanced Internal Capacitance[J]. IEEE PHOTONICS TECHNOLOGY LETTERS,2015,27(19):2004-2006.
APA Panpan Li.,Hongjian Li.,Yongbing Zhao.,Junjie Kang.,Zhicong Li.,...&Guohong Wang.(2015).Excellent ESD Resistance Property of InGaN LEDs With Enhanced Internal Capacitance.IEEE PHOTONICS TECHNOLOGY LETTERS,27(19),2004-2006.
MLA Panpan Li,et al."Excellent ESD Resistance Property of InGaN LEDs With Enhanced Internal Capacitance".IEEE PHOTONICS TECHNOLOGY LETTERS 27.19(2015):2004-2006.
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