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Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer
Peng Ren; Ning Zhang; Zhe Liu; Bin Xue; Jinmin Li; Junxi Wang
2015
Source PublicationJournal of Physics D: Applied Physics
Volume48Issue:4Pages:1
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2016-04-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27024
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Peng Ren,Ning Zhang,Zhe Liu,et al. Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer[J]. Journal of Physics D: Applied Physics,2015,48(4):1.
APA Peng Ren,Ning Zhang,Zhe Liu,Bin Xue,Jinmin Li,&Junxi Wang.(2015).Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer.Journal of Physics D: Applied Physics,48(4),1.
MLA Peng Ren,et al."Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer".Journal of Physics D: Applied Physics 48.4(2015):1.
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