Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer | |
Peng Ren; Ning Zhang; Zhe Liu; Bin Xue; Jinmin Li; Junxi Wang | |
2015 | |
Source Publication | Journal of Physics D: Applied Physics
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Volume | 48Issue:4Pages:1 |
Subject Area | 半导体器件 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2016-04-15 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/27024 |
Collection | 中科院半导体照明研发中心 |
Recommended Citation GB/T 7714 | Peng Ren,Ning Zhang,Zhe Liu,et al. Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer[J]. Journal of Physics D: Applied Physics,2015,48(4):1. |
APA | Peng Ren,Ning Zhang,Zhe Liu,Bin Xue,Jinmin Li,&Junxi Wang.(2015).Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer.Journal of Physics D: Applied Physics,48(4),1. |
MLA | Peng Ren,et al."Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer".Journal of Physics D: Applied Physics 48.4(2015):1. |
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