| Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer | |
| Peng Ren; Ning Zhang; Zhe Liu; Bin Xue; Jinmin Li; Junxi Wang | |
| 2015 | |
| Source Publication | Journal of Physics D: Applied Physics
 |
| Volume | 48Issue:4Pages:1 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2016-04-15 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27024 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Peng Ren,Ning Zhang,Zhe Liu,et al. Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer[J]. Journal of Physics D: Applied Physics,2015,48(4):1. |
| APA | Peng Ren,Ning Zhang,Zhe Liu,Bin Xue,Jinmin Li,&Junxi Wang.(2015).Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer.Journal of Physics D: Applied Physics,48(4),1. |
| MLA | Peng Ren,et al."Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer".Journal of Physics D: Applied Physics 48.4(2015):1. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Promotion of electro（1878KB） | 限制开放 | License | Application Full Text | |||
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