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能带调控提高GaN/InGaN多量子阱蓝光LED效率研究
张连; 魏学成; 路坤熠; 魏同波; 王军喜; 李晋闽
2015
Source Publication中国科学: 物理学 力学 天文学
Volume45Issue:6Pages:067305
Subject Area半导体器件
Indexed BySCI
Language中文
Date Available2016-04-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27016
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
张连,魏学成,路坤熠,等. 能带调控提高GaN/InGaN多量子阱蓝光LED效率研究[J]. 中国科学: 物理学 力学 天文学,2015,45(6):067305.
APA 张连,魏学成,路坤熠,魏同波,王军喜,&李晋闽.(2015).能带调控提高GaN/InGaN多量子阱蓝光LED效率研究.中国科学: 物理学 力学 天文学,45(6),067305.
MLA 张连,et al."能带调控提高GaN/InGaN多量子阱蓝光LED效率研究".中国科学: 物理学 力学 天文学 45.6(2015):067305.
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