SEMI OpenIR  > 中科院半导体照明研发中心
Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser
Yingdong Tian; Jianchang Yan; Yun Zhang; Xiang Chen; Yanan Guo; Peipei Cong; Lili Sun; Qinjin Wang; Enqing Guo; Xuecheng Wei; Junxi Wang; Jinmin Li
2015
Source PublicationOptics Express
Volume23Issue:9Pages:11334-11340
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2016-04-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27008
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Yingdong Tian,Jianchang Yan,Yun Zhang,et al. Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser[J]. Optics Express,2015,23(9):11334-11340.
APA Yingdong Tian.,Jianchang Yan.,Yun Zhang.,Xiang Chen.,Yanan Guo.,...&Jinmin Li.(2015).Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser.Optics Express,23(9),11334-11340.
MLA Yingdong Tian,et al."Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser".Optics Express 23.9(2015):11334-11340.
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