| Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching | |
| Chong Geng; Qingfeng Yan; Peng Dong; Liang Shan; Chengxiao Du; Tongbo Wei; Zhibiao Hao | |
| 2015 | |
| Source Publication | Journal of Vacuum Science & Technology B
 |
| Volume | 33Pages:032402 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2016-04-15 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27005 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Chong Geng,Qingfeng Yan,Peng Dong,et al. Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching[J]. Journal of Vacuum Science & Technology B,2015,33:032402. |
| APA | Chong Geng.,Qingfeng Yan.,Peng Dong.,Liang Shan.,Chengxiao Du.,...&Zhibiao Hao.(2015).Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching.Journal of Vacuum Science & Technology B,33,032402. |
| MLA | Chong Geng,et al."Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching".Journal of Vacuum Science & Technology B 33(2015):032402. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Improved performance（2129KB） | 限制开放 | License | Application Full Text | |||
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