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Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching
Chong Geng; Qingfeng Yan; Peng Dong; Liang Shan; Chengxiao Du; Tongbo Wei; Zhibiao Hao
2015
Source PublicationJournal of Vacuum Science & Technology B
Volume33Pages:032402
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2016-04-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27005
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Chong Geng,Qingfeng Yan,Peng Dong,et al. Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching[J]. Journal of Vacuum Science & Technology B,2015,33:032402.
APA Chong Geng.,Qingfeng Yan.,Peng Dong.,Liang Shan.,Chengxiao Du.,...&Zhibiao Hao.(2015).Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching.Journal of Vacuum Science & Technology B,33,032402.
MLA Chong Geng,et al."Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching".Journal of Vacuum Science & Technology B 33(2015):032402.
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