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Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
Panpan Li; Hongjian Li; Zhi Li; Junjie Kang; Xiaoyan Yi; Jinmin Li; Guohong Wang
2015
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume117Pages:073101
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2016-04-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27000
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Panpan Li,Hongjian Li,Zhi Li,et al. Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes[J]. JOURNAL OF APPLIED PHYSICS,2015,117:073101.
APA Panpan Li.,Hongjian Li.,Zhi Li.,Junjie Kang.,Xiaoyan Yi.,...&Guohong Wang.(2015).Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes.JOURNAL OF APPLIED PHYSICS,117,073101.
MLA Panpan Li,et al."Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes".JOURNAL OF APPLIED PHYSICS 117(2015):073101.
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