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Electron transport behaviors through donor-induced quantum dot array in heavily n-doped junctionless nanowire transistors
Liuhong Ma; Weihua Han; Hao Wang; Wenting Hong; Qifeng Lyu; Xiang Yang; Fuhua Yang
2015
Source PublicationJ. Appl. Phys
Volume117Pages:034505
Subject Area微电子学
Indexed BySCI
Language英语
Date Available2016-04-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26979
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
Liuhong Ma,Weihua Han,Hao Wang,et al. Electron transport behaviors through donor-induced quantum dot array in heavily n-doped junctionless nanowire transistors[J]. J. Appl. Phys,2015,117:034505.
APA Liuhong Ma.,Weihua Han.,Hao Wang.,Wenting Hong.,Qifeng Lyu.,...&Fuhua Yang.(2015).Electron transport behaviors through donor-induced quantum dot array in heavily n-doped junctionless nanowire transistors.J. Appl. Phys,117,034505.
MLA Liuhong Ma,et al."Electron transport behaviors through donor-induced quantum dot array in heavily n-doped junctionless nanowire transistors".J. Appl. Phys 117(2015):034505.
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