SEMI OpenIR  > 半导体超晶格国家重点实验室
Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes
Wengang Luo; Yufei Cao; Pingan Hu; Kaiming Cai; Qi Feng; Faguang Yan; Tengfei Yan; Xinhui Zhang; Kaiyou Wang
2015
Source PublicationAdvanced Optical Materials
Volume3Issue:10Pages:1418–1423
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2016-04-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26956
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Wengang Luo,Yufei Cao,Pingan Hu,et al. Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes[J]. Advanced Optical Materials,2015,3(10):1418–1423.
APA Wengang Luo.,Yufei Cao.,Pingan Hu.,Kaiming Cai.,Qi Feng.,...&Kaiyou Wang.(2015).Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes.Advanced Optical Materials,3(10),1418–1423.
MLA Wengang Luo,et al."Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes".Advanced Optical Materials 3.10(2015):1418–1423.
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