Knowledge Management System Of Institute of Semiconductors,CAS
Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control | |
Houfang Liu; Ran Wang; Peng Guo; Zhenchao Wen; Jiafeng Feng; Hongxiang Wei; Xiufeng Han; Yang Ji; Shufeng Zhang | |
2015 | |
Source Publication | Scientific Reports
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Volume | 5Pages:18269 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2016-04-08 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26947 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Houfang Liu,Ran Wang,Peng Guo,et al. Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control[J]. Scientific Reports,2015,5:18269. |
APA | Houfang Liu.,Ran Wang.,Peng Guo.,Zhenchao Wen.,Jiafeng Feng.,...&Shufeng Zhang.(2015).Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control.Scientific Reports,5,18269. |
MLA | Houfang Liu,et al."Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control".Scientific Reports 5(2015):18269. |
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File Name/Size | DocType | Version | Access | License | ||
Manipulation of magn(944KB) | 限制开放 | License | Application Full Text |
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