SEMI OpenIR  > 半导体超晶格国家重点实验室
Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control
Houfang Liu; Ran Wang; Peng Guo; Zhenchao Wen; Jiafeng Feng; Hongxiang Wei; Xiufeng Han; Yang Ji; Shufeng Zhang
2015
Source PublicationScientific Reports
Volume5Pages:18269
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2016-04-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26947
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Houfang Liu,Ran Wang,Peng Guo,et al. Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control[J]. Scientific Reports,2015,5:18269.
APA Houfang Liu.,Ran Wang.,Peng Guo.,Zhenchao Wen.,Jiafeng Feng.,...&Shufeng Zhang.(2015).Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control.Scientific Reports,5,18269.
MLA Houfang Liu,et al."Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control".Scientific Reports 5(2015):18269.
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