Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control

	Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control
	Houfang Liu; Ran Wang; Peng Guo; Zhenchao Wen; Jiafeng Feng; Hongxiang Wei; Xiufeng Han; Yang Ji; Shufeng Zhang
	2015
Source Publication	Scientific Reports
Volume	5 Pages:18269
Subject Area	半导体物理
Indexed By	SCI
Language	英语
Date Available	2016-04-08
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/26947
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Houfang Liu,Ran Wang,Peng Guo,et al. Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control[J]. Scientific Reports,2015,5:18269.
APA	Houfang Liu.,Ran Wang.,Peng Guo.,Zhenchao Wen.,Jiafeng Feng.,...&Shufeng Zhang.(2015).Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control.Scientific Reports,5,18269.
MLA	Houfang Liu,et al."Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control".Scientific Reports 5(2015):18269.

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