Knowledge Management System Of Institute of Semiconductors,CAS
Interface engineering of electronic properties of graphene/boron nitride lateral heterostructures | |
Dong Zhang; Dong-Bo Zhang; Fuhua Yang; Hai-Qing Lin; Hongqi Xu; Kai Chang | |
2015 | |
Source Publication | 2D Materials
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Volume | 2Issue:4Pages:041001 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2016-04-08 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26942 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Dong Zhang,Dong-Bo Zhang,Fuhua Yang,et al. Interface engineering of electronic properties of graphene/boron nitride lateral heterostructures[J]. 2D Materials,2015,2(4):041001. |
APA | Dong Zhang,Dong-Bo Zhang,Fuhua Yang,Hai-Qing Lin,Hongqi Xu,&Kai Chang.(2015).Interface engineering of electronic properties of graphene/boron nitride lateral heterostructures.2D Materials,2(4),041001. |
MLA | Dong Zhang,et al."Interface engineering of electronic properties of graphene/boron nitride lateral heterostructures".2D Materials 2.4(2015):041001. |
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Interface engineerin(1871KB) | 限制开放 | License | Application Full Text |
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