SEMI OpenIR  > 半导体超晶格国家重点实验室
Interface engineering of electronic properties of graphene/boron nitride lateral heterostructures
Dong Zhang; Dong-Bo Zhang; Fuhua Yang; Hai-Qing Lin; Hongqi Xu; Kai Chang
2015
Source Publication2D Materials
Volume2Issue:4Pages:041001
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2016-04-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26942
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Dong Zhang,Dong-Bo Zhang,Fuhua Yang,et al. Interface engineering of electronic properties of graphene/boron nitride lateral heterostructures[J]. 2D Materials,2015,2(4):041001.
APA Dong Zhang,Dong-Bo Zhang,Fuhua Yang,Hai-Qing Lin,Hongqi Xu,&Kai Chang.(2015).Interface engineering of electronic properties of graphene/boron nitride lateral heterostructures.2D Materials,2(4),041001.
MLA Dong Zhang,et al."Interface engineering of electronic properties of graphene/boron nitride lateral heterostructures".2D Materials 2.4(2015):041001.
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