SEMI OpenIR  > 半导体超晶格国家重点实验室
Sulfur vacancy activated field effect transistors based on ReS2 nanosheets
Kai Xu; Hui-Xiong Deng; Zhenxing Wang; Yun Huang; Feng Wang; Shu-Shen Li; Jun-Wei Luo; Jun He
2015
Source PublicationNanoscale
Volume7Issue:38Pages:15757-15762
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26897
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Kai Xu,Hui-Xiong Deng,Zhenxing Wang,et al. Sulfur vacancy activated field effect transistors based on ReS2 nanosheets[J]. Nanoscale,2015,7(38):15757-15762.
APA Kai Xu.,Hui-Xiong Deng.,Zhenxing Wang.,Yun Huang.,Feng Wang.,...&Jun He.(2015).Sulfur vacancy activated field effect transistors based on ReS2 nanosheets.Nanoscale,7(38),15757-15762.
MLA Kai Xu,et al."Sulfur vacancy activated field effect transistors based on ReS2 nanosheets".Nanoscale 7.38(2015):15757-15762.
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