Knowledge Management System Of Institute of Semiconductors,CAS
Sulfur vacancy activated field effect transistors based on ReS2 nanosheets | |
Kai Xu; Hui-Xiong Deng; Zhenxing Wang; Yun Huang; Feng Wang; Shu-Shen Li; Jun-Wei Luo; Jun He | |
2015 | |
Source Publication | Nanoscale
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Volume | 7Issue:38Pages:15757-15762 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2016-03-29 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26897 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Kai Xu,Hui-Xiong Deng,Zhenxing Wang,et al. Sulfur vacancy activated field effect transistors based on ReS2 nanosheets[J]. Nanoscale,2015,7(38):15757-15762. |
APA | Kai Xu.,Hui-Xiong Deng.,Zhenxing Wang.,Yun Huang.,Feng Wang.,...&Jun He.(2015).Sulfur vacancy activated field effect transistors based on ReS2 nanosheets.Nanoscale,7(38),15757-15762. |
MLA | Kai Xu,et al."Sulfur vacancy activated field effect transistors based on ReS2 nanosheets".Nanoscale 7.38(2015):15757-15762. |
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File Name/Size | DocType | Version | Access | License | ||
Sulfur vacancy activ(1514KB) | 限制开放 | License | Application Full Text |
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