SEMI OpenIR  > 半导体超晶格国家重点实验室
Highly sensitive and fast phototransistor based on large size CVD-grown SnS2 nanosheets
Yun Huang; Hui-Xiong Deng; Kai Xu; Zhen-Xing Wang; Qi-Sheng Wang; Feng-Mei Wang; Feng Wang; Xue-Ying Zhan; Shu-Shen Li; Jun-Wei Luo; Jun He
2015
Source PublicationNanoscale
Volume7Issue:33Pages:14093-14099
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26896
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Yun Huang,Hui-Xiong Deng,Kai Xu,et al. Highly sensitive and fast phototransistor based on large size CVD-grown SnS2 nanosheets[J]. Nanoscale,2015,7(33):14093-14099.
APA Yun Huang.,Hui-Xiong Deng.,Kai Xu.,Zhen-Xing Wang.,Qi-Sheng Wang.,...&Jun He.(2015).Highly sensitive and fast phototransistor based on large size CVD-grown SnS2 nanosheets.Nanoscale,7(33),14093-14099.
MLA Yun Huang,et al."Highly sensitive and fast phototransistor based on large size CVD-grown SnS2 nanosheets".Nanoscale 7.33(2015):14093-14099.
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