SEMI OpenIR  > 半导体超晶格国家重点实验室
Gate-Tunable Ultra-High Photoresponsivity of 2D Heterostructures based on Few Layer MoS2 and Solution-Processed rGO
Juehan Yang; Nengjie Huo; Yan Li; Xiang-Wei Jiang; Tao Li2; Renxiong Li; Fangyuan Lu; Chao Fan; Bo Li; Kasper Nørgaard2; Bo W. Laursen; Zhongming Wei; Jingbo Li; Shu-Shen Li
2015
Source PublicationAdvanced Electronic Materials
Volume1Issue:10Pages:1500267
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26894
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Juehan Yang,Nengjie Huo,Yan Li,et al. Gate-Tunable Ultra-High Photoresponsivity of 2D Heterostructures based on Few Layer MoS2 and Solution-Processed rGO[J]. Advanced Electronic Materials,2015,1(10):1500267.
APA Juehan Yang.,Nengjie Huo.,Yan Li.,Xiang-Wei Jiang.,Tao Li2.,...&Shu-Shen Li.(2015).Gate-Tunable Ultra-High Photoresponsivity of 2D Heterostructures based on Few Layer MoS2 and Solution-Processed rGO.Advanced Electronic Materials,1(10),1500267.
MLA Juehan Yang,et al."Gate-Tunable Ultra-High Photoresponsivity of 2D Heterostructures based on Few Layer MoS2 and Solution-Processed rGO".Advanced Electronic Materials 1.10(2015):1500267.
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