SEMI OpenIR  > 半导体超晶格国家重点实验室
Novel Optical and Electrical Transport Properties in Atomically Thin WSe2/MoS2 p–n Heterostructures
Nengjie Huo; Sefaattin Tongay; Wenli Guo; Renxiong Li; Chao Fan; Fangyuan Lu; Juehan Yang; Bo Li; Yongtao Li; Zhongming Wei
2015
Source PublicationAdvanced Electronic Materials
Volume1Issue:5Pages:1400066
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26893
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Nengjie Huo,Sefaattin Tongay,Wenli Guo,等. Novel Optical and Electrical Transport Properties in Atomically Thin WSe2/MoS2 p–n Heterostructures[J]. Advanced Electronic Materials,2015,1(5):1400066.
APA Nengjie Huo.,Sefaattin Tongay.,Wenli Guo.,Renxiong Li.,Chao Fan.,...&Zhongming Wei.(2015).Novel Optical and Electrical Transport Properties in Atomically Thin WSe2/MoS2 p–n Heterostructures.Advanced Electronic Materials,1(5),1400066.
MLA Nengjie Huo,et al."Novel Optical and Electrical Transport Properties in Atomically Thin WSe2/MoS2 p–n Heterostructures".Advanced Electronic Materials 1.5(2015):1400066.
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