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Intrinsic defects in gallium sulfide monolayer: a first-principles study
Hui Chen; Yan Li; Le Huang; Jingbo Li
2015
Source PublicationRSC Advances
Volume5Issue:63Pages:50883-50889
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26891
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Hui Chen,Yan Li,Le Huang,et al. Intrinsic defects in gallium sulfide monolayer: a first-principles study[J]. RSC Advances,2015,5(63):50883-50889.
APA Hui Chen,Yan Li,Le Huang,&Jingbo Li.(2015).Intrinsic defects in gallium sulfide monolayer: a first-principles study.RSC Advances,5(63),50883-50889.
MLA Hui Chen,et al."Intrinsic defects in gallium sulfide monolayer: a first-principles study".RSC Advances 5.63(2015):50883-50889.
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