SEMI OpenIR  > 半导体超晶格国家重点实验室
Effects of strain on the band gap and effective mass in two-dimensional monolayer GaX (X = S, Se, Te)
Le Huang; Zhanghui Chen; Jingbo Li
2015
Source PublicationRSC Advances
Volume5Issue:8Pages:5788-5794
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26890
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Le Huang,Zhanghui Chen,Jingbo Li. Effects of strain on the band gap and effective mass in two-dimensional monolayer GaX (X = S, Se, Te)[J]. RSC Advances,2015,5(8):5788-5794.
APA Le Huang,Zhanghui Chen,&Jingbo Li.(2015).Effects of strain on the band gap and effective mass in two-dimensional monolayer GaX (X = S, Se, Te).RSC Advances,5(8),5788-5794.
MLA Le Huang,et al."Effects of strain on the band gap and effective mass in two-dimensional monolayer GaX (X = S, Se, Te)".RSC Advances 5.8(2015):5788-5794.
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