Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning

	Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning
	H.D. Zhang; M. Yu; J.C. Zhang; C.H. Sheng; X. Yan; W.P. Han; Y.C. Liu; S. Chen; G.Z. Shen; Y.Z. Long
	2015
Source Publication	Nanoscale
Volume	7 Issue:23 Pages:10513-10518
Subject Area	半导体物理
Indexed By	SCI
Language	英语
Date Available	2016-03-29
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/26879
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	H.D. Zhang,M. Yu,J.C. Zhang,等. Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning[J]. Nanoscale,2015,7(23):10513-10518.
APA	H.D. Zhang.,M. Yu.,J.C. Zhang.,C.H. Sheng.,X. Yan.,...&Y.Z. Long.(2015).Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning.Nanoscale,7(23),10513-10518.
MLA	H.D. Zhang,et al."Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning".Nanoscale 7.23(2015):10513-10518.

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