SEMI OpenIR  > 半导体超晶格国家重点实验室
Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning
H.D. Zhang; M. Yu; J.C. Zhang; C.H. Sheng; X. Yan; W.P. Han; Y.C. Liu; S. Chen; G.Z. Shen; Y.Z. Long
2015
Source PublicationNanoscale
Volume7Issue:23Pages:10513-10518
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26879
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
H.D. Zhang,M. Yu,J.C. Zhang,等. Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning[J]. Nanoscale,2015,7(23):10513-10518.
APA H.D. Zhang.,M. Yu.,J.C. Zhang.,C.H. Sheng.,X. Yan.,...&Y.Z. Long.(2015).Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning.Nanoscale,7(23),10513-10518.
MLA H.D. Zhang,et al."Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning".Nanoscale 7.23(2015):10513-10518.
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