Knowledge Management System Of Institute of Semiconductors,CAS
Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning | |
H.D. Zhang; M. Yu; J.C. Zhang; C.H. Sheng; X. Yan; W.P. Han; Y.C. Liu; S. Chen; G.Z. Shen; Y.Z. Long | |
2015 | |
Source Publication | Nanoscale
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Volume | 7Issue:23Pages:10513-10518 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2016-03-29 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26879 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | H.D. Zhang,M. Yu,J.C. Zhang,等. Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning[J]. Nanoscale,2015,7(23):10513-10518. |
APA | H.D. Zhang.,M. Yu.,J.C. Zhang.,C.H. Sheng.,X. Yan.,...&Y.Z. Long.(2015).Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning.Nanoscale,7(23),10513-10518. |
MLA | H.D. Zhang,et al."Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning".Nanoscale 7.23(2015):10513-10518. |
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Fabrication and phot(1831KB) | 限制开放 | License | Application Full Text |
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