SEMI OpenIR  > 中科院半导体材料科学重点实验室
Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer
Jian-Xia Wang; Lian-Shan Wang; Qian Zhang; Xiang-Yue Meng; Shao-Yan Yang; Gui-Juan Zhao; Hui-Jie Li; Hong-Yuan Wei; Zhan-Guo Wang
2015
Source PublicationCHINESE PHYSICS B
Volume24Issue:2Pages:26802-26806
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26865
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Jian-Xia Wang,Lian-Shan Wang,Qian Zhang,et al. Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer[J]. CHINESE PHYSICS B,2015,24(2):26802-26806.
APA Jian-Xia Wang.,Lian-Shan Wang.,Qian Zhang.,Xiang-Yue Meng.,Shao-Yan Yang.,...&Zhan-Guo Wang.(2015).Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer.CHINESE PHYSICS B,24(2),26802-26806.
MLA Jian-Xia Wang,et al."Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer".CHINESE PHYSICS B 24.2(2015):26802-26806.
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