| Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer | |
| Jian-Xia Wang; Lian-Shan Wang; Qian Zhang; Xiang-Yue Meng; Shao-Yan Yang; Gui-Juan Zhao; Hui-Jie Li; Hong-Yuan Wei; Zhan-Guo Wang | |
| 2015 | |
| Source Publication | CHINESE PHYSICS B
 |
| Volume | 24Issue:2Pages:26802-26806 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2016-03-29 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26865 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Jian-Xia Wang,Lian-Shan Wang,Qian Zhang,et al. Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer[J]. CHINESE PHYSICS B,2015,24(2):26802-26806. |
| APA | Jian-Xia Wang.,Lian-Shan Wang.,Qian Zhang.,Xiang-Yue Meng.,Shao-Yan Yang.,...&Zhan-Guo Wang.(2015).Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer.CHINESE PHYSICS B,24(2),26802-26806. |
| MLA | Jian-Xia Wang,et al."Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer".CHINESE PHYSICS B 24.2(2015):26802-26806. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Effect of the thick（487KB） | 限制开放 | License | Application Full Text | |||
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