Implantation induced defects and electrical properties of Sb-implanted ZnO | |
Hui Xie; Tong Liu; JingMing Liu; KeWei Cao; ZhiYuan Dong; Jun Yang; YouWen Zhao | |
2015 | |
Source Publication | SCIENCE CHINA Technological Sciences
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Volume | 58Issue:8Pages:1333-1338 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2016-03-29 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26862 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Hui Xie,Tong Liu,JingMing Liu,et al. Implantation induced defects and electrical properties of Sb-implanted ZnO[J]. SCIENCE CHINA Technological Sciences,2015,58(8):1333-1338. |
APA | Hui Xie.,Tong Liu.,JingMing Liu.,KeWei Cao.,ZhiYuan Dong.,...&YouWen Zhao.(2015).Implantation induced defects and electrical properties of Sb-implanted ZnO.SCIENCE CHINA Technological Sciences,58(8),1333-1338. |
MLA | Hui Xie,et al."Implantation induced defects and electrical properties of Sb-implanted ZnO".SCIENCE CHINA Technological Sciences 58.8(2015):1333-1338. |
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