SEMI OpenIR  > 中科院半导体材料科学重点实验室
Implantation induced defects and electrical properties of Sb-implanted ZnO
Hui Xie; Tong Liu; JingMing Liu; KeWei Cao; ZhiYuan Dong; Jun Yang; YouWen Zhao
2015
Source PublicationSCIENCE CHINA Technological Sciences
Volume58Issue:8Pages:1333-1338
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26862
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Hui Xie,Tong Liu,JingMing Liu,et al. Implantation induced defects and electrical properties of Sb-implanted ZnO[J]. SCIENCE CHINA Technological Sciences,2015,58(8):1333-1338.
APA Hui Xie.,Tong Liu.,JingMing Liu.,KeWei Cao.,ZhiYuan Dong.,...&YouWen Zhao.(2015).Implantation induced defects and electrical properties of Sb-implanted ZnO.SCIENCE CHINA Technological Sciences,58(8),1333-1338.
MLA Hui Xie,et al."Implantation induced defects and electrical properties of Sb-implanted ZnO".SCIENCE CHINA Technological Sciences 58.8(2015):1333-1338.
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