SEMI OpenIR  > 中科院半导体材料科学重点实验室
Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes
He Kang; Quan Wang; Hongling Xiao; Cuimei Wang; Lijuan Jiang; Chun Feng; Hong Chen; Haibo Yin; Shenqi Qu; Enchao Peng; Jiamin Gong; Xiaoliang Wang; Baiquan Li; Zhanguo Wang; Xun Hou
2015
Source PublicationPhys. Status Solidi A
Volume212Issue:5Pages:1158-1161
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26858
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
He Kang,Quan Wang,Hongling Xiao,et al. Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes[J]. Phys. Status Solidi A,2015,212(5):1158-1161.
APA He Kang.,Quan Wang.,Hongling Xiao.,Cuimei Wang.,Lijuan Jiang.,...&Xun Hou.(2015).Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes.Phys. Status Solidi A,212(5),1158-1161.
MLA He Kang,et al."Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes".Phys. Status Solidi A 212.5(2015):1158-1161.
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