SEMI OpenIR  > 中科院半导体材料科学重点实验室
Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors
Yan Jun-Da; Wang Quan; Wang Xiao-Liang; Xiao Hong-Ling; Jiang Li-Juan; Yin Hai-Bo; Feng Chun; Wang Cui-Mei; Qu Shen-Qi; Gong Jia-Min; Zhang Bo; Li Bai-Quan; Wang Zhan-Guo; Hou Xun
2015
Source PublicationCHIN. PHYS. LETT.
Volume32Issue:12Pages:127301
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26857
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Yan Jun-Da,Wang Quan,Wang Xiao-Liang,et al. Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors[J]. CHIN. PHYS. LETT.,2015,32(12):127301.
APA Yan Jun-Da.,Wang Quan.,Wang Xiao-Liang.,Xiao Hong-Ling.,Jiang Li-Juan.,...&Hou Xun.(2015).Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors.CHIN. PHYS. LETT.,32(12),127301.
MLA Yan Jun-Da,et al."Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors".CHIN. PHYS. LETT. 32.12(2015):127301.
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