SEMI OpenIR  > 中科院半导体材料科学重点实验室
A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor
Lei Cui; Quan Wang; XiaoLiang Wang; HongLing Xiao; CuiMei Wang; LiJuan Jiang; Chun Feng; HaiBo Yin; JiaMin Gong; BaiQuan Li; ZhanGuo Wang
2015
Source PublicationCHIN. PHYS. LETT.
Volume32Issue:5Pages:58501-58504
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26856
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Lei Cui,Quan Wang,XiaoLiang Wang,et al. A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor[J]. CHIN. PHYS. LETT.,2015,32(5):58501-58504.
APA Lei Cui.,Quan Wang.,XiaoLiang Wang.,HongLing Xiao.,CuiMei Wang.,...&ZhanGuo Wang.(2015).A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor.CHIN. PHYS. LETT.,32(5),58501-58504.
MLA Lei Cui,et al."A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor".CHIN. PHYS. LETT. 32.5(2015):58501-58504.
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