SEMI OpenIR  > 中科院半导体材料科学重点实验室
Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition
Shuxian Cai; Zhonghua Liu; Ni Zhong; Shengbei Liu; Xingfang Liu
2015
Source PublicationMaterials
Volume8Issue:9Pages:5586-5596
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26853
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Shuxian Cai,Zhonghua Liu,Ni Zhong,et al. Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition[J]. Materials,2015,8(9):5586-5596.
APA Shuxian Cai,Zhonghua Liu,Ni Zhong,Shengbei Liu,&Xingfang Liu.(2015).Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition.Materials,8(9),5586-5596.
MLA Shuxian Cai,et al."Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition".Materials 8.9(2015):5586-5596.
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