| Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition | |
| Shuxian Cai; Zhonghua Liu; Ni Zhong; Shengbei Liu; Xingfang Liu | |
| 2015 | |
| Source Publication | Materials
 |
| Volume | 8Issue:9Pages:5586-5596 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2016-03-29 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26853 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Shuxian Cai,Zhonghua Liu,Ni Zhong,et al. Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition[J]. Materials,2015,8(9):5586-5596. |
| APA | Shuxian Cai,Zhonghua Liu,Ni Zhong,Shengbei Liu,&Xingfang Liu.(2015).Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition.Materials,8(9),5586-5596. |
| MLA | Shuxian Cai,et al."Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition".Materials 8.9(2015):5586-5596. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Effect of Growth Pre（1709KB） | 限制开放 | License | Application Full Text | |||
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