SEMI OpenIR  > 中科院半导体材料科学重点实验室
Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition
Yujue Yang; Yiping Zeng
2015
Source PublicationPhysica Status Solidi a-Applications and Materials Science
Volume212Issue:8Pages:1805-1809
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26852
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Yujue Yang,Yiping Zeng. Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition[J]. Physica Status Solidi a-Applications and Materials Science,2015,212(8):1805-1809.
APA Yujue Yang,&Yiping Zeng.(2015).Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition.Physica Status Solidi a-Applications and Materials Science,212(8),1805-1809.
MLA Yujue Yang,et al."Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition".Physica Status Solidi a-Applications and Materials Science 212.8(2015):1805-1809.
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