| Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition | |
| Yujue Yang; Yiping Zeng | |
| 2015 | |
| Source Publication | Physica Status Solidi a-Applications and Materials Science
 |
| Volume | 212Issue:8Pages:1805-1809 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2016-03-29 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26852 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Yujue Yang,Yiping Zeng. Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition[J]. Physica Status Solidi a-Applications and Materials Science,2015,212(8):1805-1809. |
| APA | Yujue Yang,&Yiping Zeng.(2015).Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition.Physica Status Solidi a-Applications and Materials Science,212(8),1805-1809. |
| MLA | Yujue Yang,et al."Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition".Physica Status Solidi a-Applications and Materials Science 212.8(2015):1805-1809. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Improved hole distri（694KB） | 限制开放 | License | Application Full Text | |||
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