Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition | |
Yujue Yang; Yiping Zeng | |
2015 | |
Source Publication | Physica Status Solidi a-Applications and Materials Science
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Volume | 212Issue:8Pages:1805-1809 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2016-03-29 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26852 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Yujue Yang,Yiping Zeng. Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition[J]. Physica Status Solidi a-Applications and Materials Science,2015,212(8):1805-1809. |
APA | Yujue Yang,&Yiping Zeng.(2015).Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition.Physica Status Solidi a-Applications and Materials Science,212(8),1805-1809. |
MLA | Yujue Yang,et al."Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition".Physica Status Solidi a-Applications and Materials Science 212.8(2015):1805-1809. |
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Improved hole distri(694KB) | 限制开放 | License | Application Full Text |
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