SEMI OpenIR  > 中科院半导体材料科学重点实验室
Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy
Linen Zhang; Chao Liu; Qiumin Yang; Lijie Cui; Yiping Zeng
2015
Source PublicationMaterials Science in Semiconductor Processing
Volume29Pages:351-356
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26850
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Linen Zhang,Chao Liu,Qiumin Yang,et al. Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy[J]. Materials Science in Semiconductor Processing,2015,29:351-356.
APA Linen Zhang,Chao Liu,Qiumin Yang,Lijie Cui,&Yiping Zeng.(2015).Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy.Materials Science in Semiconductor Processing,29,351-356.
MLA Linen Zhang,et al."Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy".Materials Science in Semiconductor Processing 29(2015):351-356.
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