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Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth
Xingfang Liu; Yu Chen; Changzheng Sun; Min Guan; Yang Zhang; Feng Zhang; Guosheng Sun; Yiping Zeng
2015
Source PublicationNanomaterials
Volume5Issue:3Pages:1532-1543
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26849
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Xingfang Liu,Yu Chen,Changzheng Sun,et al. Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth[J]. Nanomaterials,2015,5(3):1532-1543.
APA Xingfang Liu.,Yu Chen.,Changzheng Sun.,Min Guan.,Yang Zhang.,...&Yiping Zeng.(2015).Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth.Nanomaterials,5(3),1532-1543.
MLA Xingfang Liu,et al."Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth".Nanomaterials 5.3(2015):1532-1543.
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