SEMI OpenIR  > 中科院半导体材料科学重点实验室
Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes
Yujue Yang; Yiping Zeng
2015
Source PublicationJournal of Applied Physics
Volume117Issue:3Pages:035705
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26847
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Yujue Yang,Yiping Zeng. Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes[J]. Journal of Applied Physics,2015,117(3):035705.
APA Yujue Yang,&Yiping Zeng.(2015).Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes.Journal of Applied Physics,117(3),035705.
MLA Yujue Yang,et al."Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes".Journal of Applied Physics 117.3(2015):035705.
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