SEMI OpenIR  > 中科院半导体材料科学重点实验室
Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates
Guoguo Yan; Feng Zhang; Yingxi Niu; Fei Yang; Xingfang Liu; Lei Wang; Wanshun Zhao; Guosheng Sun; Yiping Zeng
2015
Source PublicationApplied Surface Science
Volume353Pages:744-749
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26845
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Guoguo Yan,Feng Zhang,Yingxi Niu,et al. Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates[J]. Applied Surface Science,2015,353:744-749.
APA Guoguo Yan.,Feng Zhang.,Yingxi Niu.,Fei Yang.,Xingfang Liu.,...&Yiping Zeng.(2015).Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates.Applied Surface Science,353,744-749.
MLA Guoguo Yan,et al."Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates".Applied Surface Science 353(2015):744-749.
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