SEMI OpenIR  > 半导体超晶格国家重点实验室
Contact properties of field-effect transistors based on InAs nanowire thinner than 16 nm
Tuanwei Shi; Mengqi Fu; Dong Pan; Yao Guo; Jianhua Zhao; Qing Chen
2015
Source PublicationNanotechnology
Volume26Pages:175202
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26822
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Tuanwei Shi,Mengqi Fu,Dong Pan,et al. Contact properties of field-effect transistors based on InAs nanowire thinner than 16 nm[J]. Nanotechnology,2015,26:175202.
APA Tuanwei Shi,Mengqi Fu,Dong Pan,Yao Guo,Jianhua Zhao,&Qing Chen.(2015).Contact properties of field-effect transistors based on InAs nanowire thinner than 16 nm.Nanotechnology,26,175202.
MLA Tuanwei Shi,et al."Contact properties of field-effect transistors based on InAs nanowire thinner than 16 nm".Nanotechnology 26(2015):175202.
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