SEMI OpenIR  > 中科院半导体材料科学重点实验室
Optimization of 1.3-µm InGaAsP/InP Electro-Absorption Modulator
Wang HuiTao; Zhou DaiBing; Zhang RuiKang; Lu Dan; Zhao LingJuan; Zhu HongLiang; Wang Wei; Ji Chen
2015
Source PublicationChinese Physics Letters
Volume32Issue:8Pages:084203
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26818
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wang HuiTao,Zhou DaiBing,Zhang RuiKang,et al. Optimization of 1.3-µm InGaAsP/InP Electro-Absorption Modulator[J]. Chinese Physics Letters,2015,32(8):084203.
APA Wang HuiTao.,Zhou DaiBing.,Zhang RuiKang.,Lu Dan.,Zhao LingJuan.,...&Ji Chen.(2015).Optimization of 1.3-µm InGaAsP/InP Electro-Absorption Modulator.Chinese Physics Letters,32(8),084203.
MLA Wang HuiTao,et al."Optimization of 1.3-µm InGaAsP/InP Electro-Absorption Modulator".Chinese Physics Letters 32.8(2015):084203.
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