SEMI OpenIR  > 中科院半导体材料科学重点实验室
High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio 𝐼on/𝐼off Grown on Semi-insulating GaAs Substrates by MOCVD
XiangTing Kong; XuLiang Zhou; ShiYan Li; LiJun Qiao; HongGang Liu; Wei Wang; JiaoQing Pan
2015
Source PublicationChinese Physics Letters
Volume32Issue:3Pages:37301-37303
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26814
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
XiangTing Kong,XuLiang Zhou,ShiYan Li,et al. High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio 𝐼on/𝐼off Grown on Semi-insulating GaAs Substrates by MOCVD[J]. Chinese Physics Letters,2015,32(3):37301-37303.
APA XiangTing Kong.,XuLiang Zhou.,ShiYan Li.,LiJun Qiao.,HongGang Liu.,...&JiaoQing Pan.(2015).High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio 𝐼on/𝐼off Grown on Semi-insulating GaAs Substrates by MOCVD.Chinese Physics Letters,32(3),37301-37303.
MLA XiangTing Kong,et al."High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio 𝐼on/𝐼off Grown on Semi-insulating GaAs Substrates by MOCVD".Chinese Physics Letters 32.3(2015):37301-37303.
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