Continuous-wave operation up to 20°C of deep ridge npn-InGaAsP/InP multiple quantum well transistor laser emitting at 1.5-μm wavelength | |
L.J.Qiao; S.Liang; L.S.Han; J.J.Xu; H.L.Zhu; W.Wang | |
2015 | |
Source Publication | Optics express
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Volume | 23Issue:9Pages:11388-11393 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2016-03-23 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26813 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | L.J.Qiao,S.Liang,L.S.Han,et al. Continuous-wave operation up to 20°C of deep ridge npn-InGaAsP/InP multiple quantum well transistor laser emitting at 1.5-μm wavelength[J]. Optics express,2015,23(9):11388-11393. |
APA | L.J.Qiao,S.Liang,L.S.Han,J.J.Xu,H.L.Zhu,&W.Wang.(2015).Continuous-wave operation up to 20°C of deep ridge npn-InGaAsP/InP multiple quantum well transistor laser emitting at 1.5-μm wavelength.Optics express,23(9),11388-11393. |
MLA | L.J.Qiao,et al."Continuous-wave operation up to 20°C of deep ridge npn-InGaAsP/InP multiple quantum well transistor laser emitting at 1.5-μm wavelength".Optics express 23.9(2015):11388-11393. |
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