SEMI OpenIR  > 中科院半导体材料科学重点实验室
Continuous-wave operation up to 20°C of deep ridge npn-InGaAsP/InP multiple quantum well transistor laser emitting at 1.5-μm wavelength
L.J.Qiao; S.Liang; L.S.Han; J.J.Xu; H.L.Zhu; W.Wang
2015
Source PublicationOptics express
Volume23Issue:9Pages:11388-11393
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26813
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
L.J.Qiao,S.Liang,L.S.Han,et al. Continuous-wave operation up to 20°C of deep ridge npn-InGaAsP/InP multiple quantum well transistor laser emitting at 1.5-μm wavelength[J]. Optics express,2015,23(9):11388-11393.
APA L.J.Qiao,S.Liang,L.S.Han,J.J.Xu,H.L.Zhu,&W.Wang.(2015).Continuous-wave operation up to 20°C of deep ridge npn-InGaAsP/InP multiple quantum well transistor laser emitting at 1.5-μm wavelength.Optics express,23(9),11388-11393.
MLA L.J.Qiao,et al."Continuous-wave operation up to 20°C of deep ridge npn-InGaAsP/InP multiple quantum well transistor laser emitting at 1.5-μm wavelength".Optics express 23.9(2015):11388-11393.
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