| Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio | |
| Li ShiYan; Zhou XuLiang; Kong XiangTing; Li MengKe; Mi JunPing; Bian Jing; Wang Wei; Pan JiaoQing | |
| 2015 | |
| Source Publication | Chinese Physics Letters
 |
| Volume | 32Issue:2Pages:028101 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2016-03-23 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26811 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Li ShiYan,Zhou XuLiang,Kong XiangTing,et al. Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio[J]. Chinese Physics Letters,2015,32(2):028101. |
| APA | Li ShiYan.,Zhou XuLiang.,Kong XiangTing.,Li MengKe.,Mi JunPing.,...&Pan JiaoQing.(2015).Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio.Chinese Physics Letters,32(2),028101. |
| MLA | Li ShiYan,et al."Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio".Chinese Physics Letters 32.2(2015):028101. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Selective Area Growt（1238KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment