SEMI OpenIR  > 中科院半导体材料科学重点实验室
Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio
Li ShiYan; Zhou XuLiang; Kong XiangTing; Li MengKe; Mi JunPing; Bian Jing; Wang Wei; Pan JiaoQing
2015
Source PublicationChinese Physics Letters
Volume32Issue:2Pages:028101
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26811
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li ShiYan,Zhou XuLiang,Kong XiangTing,et al. Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio[J]. Chinese Physics Letters,2015,32(2):028101.
APA Li ShiYan.,Zhou XuLiang.,Kong XiangTing.,Li MengKe.,Mi JunPing.,...&Pan JiaoQing.(2015).Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio.Chinese Physics Letters,32(2),028101.
MLA Li ShiYan,et al."Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio".Chinese Physics Letters 32.2(2015):028101.
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