Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio | |
Li ShiYan; Zhou XuLiang; Kong XiangTing; Li MengKe; Mi JunPing; Bian Jing; Wang Wei; Pan JiaoQing | |
2015 | |
Source Publication | Chinese Physics Letters
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Volume | 32Issue:2Pages:028101 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2016-03-23 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26811 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Li ShiYan,Zhou XuLiang,Kong XiangTing,et al. Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio[J]. Chinese Physics Letters,2015,32(2):028101. |
APA | Li ShiYan.,Zhou XuLiang.,Kong XiangTing.,Li MengKe.,Mi JunPing.,...&Pan JiaoQing.(2015).Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio.Chinese Physics Letters,32(2),028101. |
MLA | Li ShiYan,et al."Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio".Chinese Physics Letters 32.2(2015):028101. |
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Selective Area Growt(1238KB) | 限制开放 | License | Application Full Text |
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