SEMI OpenIR  > 中科院半导体材料科学重点实验室
Evaluation of growth mode and optimization of growth parameters for GaAs epitaxy in V-shaped
Shiyan Li; Xuliang Zhou; Xiangting Kong; Mengke Li; Junping Mi; Jing Bian; Wei Wang; Jiaoqing Pan
2015
Source PublicationJournal of Crystal Growth
Volume426Pages:147-152
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26803
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Shiyan Li,Xuliang Zhou,Xiangting Kong,et al. Evaluation of growth mode and optimization of growth parameters for GaAs epitaxy in V-shaped[J]. Journal of Crystal Growth,2015,426:147-152.
APA Shiyan Li.,Xuliang Zhou.,Xiangting Kong.,Mengke Li.,Junping Mi.,...&Jiaoqing Pan.(2015).Evaluation of growth mode and optimization of growth parameters for GaAs epitaxy in V-shaped.Journal of Crystal Growth,426,147-152.
MLA Shiyan Li,et al."Evaluation of growth mode and optimization of growth parameters for GaAs epitaxy in V-shaped".Journal of Crystal Growth 426(2015):147-152.
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