SEMI OpenIR  > 中科院半导体材料科学重点实验室
Transistor Laser With a Current Confinement Aperture in the Emitter Ridge
Song Liang; Lijun Qiao; Liangshun Han; Junjie Xu; Hongliang Zhu; Wei Wang
2015
Source PublicationIEEE Electron Device Letters
Volume36Issue:10Pages:1063-1065
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26802
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Song Liang,Lijun Qiao,Liangshun Han,et al. Transistor Laser With a Current Confinement Aperture in the Emitter Ridge[J]. IEEE Electron Device Letters,2015,36(10):1063-1065.
APA Song Liang,Lijun Qiao,Liangshun Han,Junjie Xu,Hongliang Zhu,&Wei Wang.(2015).Transistor Laser With a Current Confinement Aperture in the Emitter Ridge.IEEE Electron Device Letters,36(10),1063-1065.
MLA Song Liang,et al."Transistor Laser With a Current Confinement Aperture in the Emitter Ridge".IEEE Electron Device Letters 36.10(2015):1063-1065.
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