| Transistor Laser With a Current Confinement Aperture in the Emitter Ridge | |
| Song Liang; Lijun Qiao; Liangshun Han; Junjie Xu; Hongliang Zhu; Wei Wang | |
| 2015 | |
| Source Publication | IEEE Electron Device Letters
 |
| Volume | 36Issue:10Pages:1063-1065 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2016-03-23 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26802 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Song Liang,Lijun Qiao,Liangshun Han,et al. Transistor Laser With a Current Confinement Aperture in the Emitter Ridge[J]. IEEE Electron Device Letters,2015,36(10):1063-1065. |
| APA | Song Liang,Lijun Qiao,Liangshun Han,Junjie Xu,Hongliang Zhu,&Wei Wang.(2015).Transistor Laser With a Current Confinement Aperture in the Emitter Ridge.IEEE Electron Device Letters,36(10),1063-1065. |
| MLA | Song Liang,et al."Transistor Laser With a Current Confinement Aperture in the Emitter Ridge".IEEE Electron Device Letters 36.10(2015):1063-1065. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Transistor Laser Wit（573KB） | 限制开放 | License | Application Full Text | |||
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