Synthesis of in-plane and stacked graphene/ hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition | |
Junhua Meng; Xingwang Zhang; Haolin Wang; Xibiao Ren; Chuanhong Jin; Zhigang Yin; Xin Liu; Heng Liu | |
2015 | |
Source Publication | Nanoscale
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Volume | 7Issue:38Pages:16046-16053 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2016-03-23 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26801 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Junhua Meng,Xingwang Zhang,Haolin Wang,et al. Synthesis of in-plane and stacked graphene/ hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition[J]. Nanoscale,2015,7(38):16046-16053. |
APA | Junhua Meng.,Xingwang Zhang.,Haolin Wang.,Xibiao Ren.,Chuanhong Jin.,...&Heng Liu.(2015).Synthesis of in-plane and stacked graphene/ hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition.Nanoscale,7(38),16046-16053. |
MLA | Junhua Meng,et al."Synthesis of in-plane and stacked graphene/ hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition".Nanoscale 7.38(2015):16046-16053. |
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File Name/Size | DocType | Version | Access | License | ||
Synthesis of in-plan(4534KB) | 限制开放 | License | Application Full Text |
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