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Synthesis of in-plane and stacked graphene/ hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition
Junhua Meng; Xingwang Zhang; Haolin Wang; Xibiao Ren; Chuanhong Jin; Zhigang Yin; Xin Liu; Heng Liu
2015
Source PublicationNanoscale
Volume7Issue:38Pages:16046-16053
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26801
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Junhua Meng,Xingwang Zhang,Haolin Wang,et al. Synthesis of in-plane and stacked graphene/ hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition[J]. Nanoscale,2015,7(38):16046-16053.
APA Junhua Meng.,Xingwang Zhang.,Haolin Wang.,Xibiao Ren.,Chuanhong Jin.,...&Heng Liu.(2015).Synthesis of in-plane and stacked graphene/ hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition.Nanoscale,7(38),16046-16053.
MLA Junhua Meng,et al."Synthesis of in-plane and stacked graphene/ hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition".Nanoscale 7.38(2015):16046-16053.
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