SEMI OpenIR  > 中科院半导体材料科学重点实验室
Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology
DaiBing Zhou; HuiTao Wang; RuiKang Zhang; BaoJun Wang; Jing Bian; Xin An; Dan Lu; LingJuan Zhao; HongLiang Zhu; Chen Ji; Wei Wang
2015
Source PublicationChinese Physics Letters
Volume32Issue:5Pages:54205-54207
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26796
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
DaiBing Zhou,HuiTao Wang,RuiKang Zhang,et al. Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology[J]. Chinese Physics Letters,2015,32(5):54205-54207.
APA DaiBing Zhou.,HuiTao Wang.,RuiKang Zhang.,BaoJun Wang.,Jing Bian.,...&Wei Wang.(2015).Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology.Chinese Physics Letters,32(5),54205-54207.
MLA DaiBing Zhou,et al."Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology".Chinese Physics Letters 32.5(2015):54205-54207.
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