SEMI OpenIR  > 中科院半导体材料科学重点实验室
Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal
Jianliang Huang; Wenquan Ma; Yanhua Zhang; Yulian Cao; Ke Liu; Wenjun Huang; Shuai Luo; Haiming Ji; Tao Yang
2015
Source PublicationSolid State Communications
Volume224Pages:34-36
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26792
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Jianliang Huang,Wenquan Ma,Yanhua Zhang,et al. Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal[J]. Solid State Communications,2015,224:34-36.
APA Jianliang Huang.,Wenquan Ma.,Yanhua Zhang.,Yulian Cao.,Ke Liu.,...&Tao Yang.(2015).Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal.Solid State Communications,224,34-36.
MLA Jianliang Huang,et al."Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal".Solid State Communications 224(2015):34-36.
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