SEMI OpenIR  > 中科院半导体材料科学重点实验室
Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate
Ke Liu; Wenquan Ma; Jianliang Huang; Yanhua Zhang; Yulian Cao; Wenjun Huang; Shuai Luo; Tao Yang
2015
Source PublicationApplied Physics Letters
Volume107Issue:4Pages:041103
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26789
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Ke Liu,Wenquan Ma,Jianliang Huang,et al. Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate[J]. Applied Physics Letters,2015,107(4):041103.
APA Ke Liu.,Wenquan Ma.,Jianliang Huang.,Yanhua Zhang.,Yulian Cao.,...&Tao Yang.(2015).Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate.Applied Physics Letters,107(4),041103.
MLA Ke Liu,et al."Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate".Applied Physics Letters 107.4(2015):041103.
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