SEMI OpenIR  > 中科院半导体材料科学重点实验室
Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector
Jianliang Huang; Wenquan Ma; Yanhua Zhang; Yulian Cao; Ke Liu; Wenjun Huang; Shulong Lu
2015
Source PublicationApplied Physics Letters
Volume106Issue:26Pages:1-5
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26788
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Jianliang Huang,Wenquan Ma,Yanhua Zhang,et al. Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector[J]. Applied Physics Letters,2015,106(26):1-5.
APA Jianliang Huang.,Wenquan Ma.,Yanhua Zhang.,Yulian Cao.,Ke Liu.,...&Shulong Lu.(2015).Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector.Applied Physics Letters,106(26),1-5.
MLA Jianliang Huang,et al."Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector".Applied Physics Letters 106.26(2015):1-5.
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