Possible atomic structures responsible for the sub-bandgap absorption of chalcogen hyper doped | |
KeFan Wang; Hezhu Shao; Kong Liu; Shengchun Qu; Yuanxu Wang; Zhanguo Wang | |
2015 | |
Source Publication | Applied Physics Letters
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Volume | 107Pages:112106 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2016-03-23 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26782 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | KeFan Wang,Hezhu Shao,Kong Liu,et al. Possible atomic structures responsible for the sub-bandgap absorption of chalcogen hyper doped[J]. Applied Physics Letters,2015,107:112106. |
APA | KeFan Wang,Hezhu Shao,Kong Liu,Shengchun Qu,Yuanxu Wang,&Zhanguo Wang.(2015).Possible atomic structures responsible for the sub-bandgap absorption of chalcogen hyper doped.Applied Physics Letters,107,112106. |
MLA | KeFan Wang,et al."Possible atomic structures responsible for the sub-bandgap absorption of chalcogen hyper doped".Applied Physics Letters 107(2015):112106. |
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