SEMI OpenIR  > 中科院半导体材料科学重点实验室
Possible atomic structures responsible for the sub-bandgap absorption of chalcogen hyper doped
KeFan Wang; Hezhu Shao; Kong Liu; Shengchun Qu; Yuanxu Wang; Zhanguo Wang
2015
Source PublicationApplied Physics Letters
Volume107Pages:112106
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26782
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
KeFan Wang,Hezhu Shao,Kong Liu,et al. Possible atomic structures responsible for the sub-bandgap absorption of chalcogen hyper doped[J]. Applied Physics Letters,2015,107:112106.
APA KeFan Wang,Hezhu Shao,Kong Liu,Shengchun Qu,Yuanxu Wang,&Zhanguo Wang.(2015).Possible atomic structures responsible for the sub-bandgap absorption of chalcogen hyper doped.Applied Physics Letters,107,112106.
MLA KeFan Wang,et al."Possible atomic structures responsible for the sub-bandgap absorption of chalcogen hyper doped".Applied Physics Letters 107(2015):112106.
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