Epitaxial properties of ZnO thin films on LaAlO3 substrates by pulsed laser deposition | |
C.H. Jia; S.Wang; Y.H.Wu; Y.H.Chen; X.W.Sun; W.F.Zhang | |
2015 | |
Source Publication | Journal of Crystal Growth
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Volume | 421Pages:19–22 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2016-03-23 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26778 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | C.H. Jia,S.Wang,Y.H.Wu,et al. Epitaxial properties of ZnO thin films on LaAlO3 substrates by pulsed laser deposition[J]. Journal of Crystal Growth,2015,421:19–22. |
APA | C.H. Jia,S.Wang,Y.H.Wu,Y.H.Chen,X.W.Sun,&W.F.Zhang.(2015).Epitaxial properties of ZnO thin films on LaAlO3 substrates by pulsed laser deposition.Journal of Crystal Growth,421,19–22. |
MLA | C.H. Jia,et al."Epitaxial properties of ZnO thin films on LaAlO3 substrates by pulsed laser deposition".Journal of Crystal Growth 421(2015):19–22. |
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Epitaxial properties(360KB) | 限制开放 | License | Application Full Text |
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