SEMI OpenIR  > 中科院半导体材料科学重点实验室
Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells
J.L. Yu; S.Y. Cheng; Y.F. Lai; Q. Zheng; Y.H. Chen; C.G. Tang
2015
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume117Pages:015302
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26776
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
J.L. Yu,S.Y. Cheng,Y.F. Lai,et al. Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells[J]. JOURNAL OF APPLIED PHYSICS,2015,117:015302.
APA J.L. Yu,S.Y. Cheng,Y.F. Lai,Q. Zheng,Y.H. Chen,&C.G. Tang.(2015).Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells.JOURNAL OF APPLIED PHYSICS,117,015302.
MLA J.L. Yu,et al."Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells".JOURNAL OF APPLIED PHYSICS 117(2015):015302.
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