SEMI OpenIR  > 中科院半导体材料科学重点实验室
High-Mobility In0.23Ga0.77As Channel MOSFETs Grown on Ge/Si Virtual Substrate by MOCVD
Xiangting Kong; Xuliang Zhou; Shiyan Li; Hudong Chang; Honggang Liu; Jing Wang; Renrong Liang; Wei Wang; Jiaoqing Pan
2015
Source PublicationIEEE TRANSACTIONS ON ELECTRON DEVICES
Volume62Issue:5Pages:1456-1459
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26766
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Xiangting Kong,Xuliang Zhou,Shiyan Li,et al. High-Mobility In0.23Ga0.77As Channel MOSFETs Grown on Ge/Si Virtual Substrate by MOCVD[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2015,62(5):1456-1459.
APA Xiangting Kong.,Xuliang Zhou.,Shiyan Li.,Hudong Chang.,Honggang Liu.,...&Jiaoqing Pan.(2015).High-Mobility In0.23Ga0.77As Channel MOSFETs Grown on Ge/Si Virtual Substrate by MOCVD.IEEE TRANSACTIONS ON ELECTRON DEVICES,62(5),1456-1459.
MLA Xiangting Kong,et al."High-Mobility In0.23Ga0.77As Channel MOSFETs Grown on Ge/Si Virtual Substrate by MOCVD".IEEE TRANSACTIONS ON ELECTRON DEVICES 62.5(2015):1456-1459.
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