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Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition
Junyan Jiang; Yuantao Zhang; Fan Yang; Zhen Huang; Long Yan; Pengchong Li; Chen Chi; Degang Zhao; Baolin Zhang; Guotong Du
2015
Source PublicationVACUUM
Volume119Issue:2015Pages:63e67
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26762
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Junyan Jiang,Yuantao Zhang,Fan Yang,et al. Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition[J]. VACUUM,2015,119(2015):63e67.
APA Junyan Jiang.,Yuantao Zhang.,Fan Yang.,Zhen Huang.,Long Yan.,...&Guotong Du.(2015).Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition.VACUUM,119(2015),63e67.
MLA Junyan Jiang,et al."Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition".VACUUM 119.2015(2015):63e67.
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