Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition | |
Junyan Jiang; Yuantao Zhang; Fan Yang; Zhen Huang; Long Yan; Pengchong Li; Chen Chi; Degang Zhao; Baolin Zhang; Guotong Du | |
2015 | |
Source Publication | VACUUM
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Volume | 119Issue:2015Pages:63e67 |
Subject Area | 光电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2016-03-23 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26762 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | Junyan Jiang,Yuantao Zhang,Fan Yang,et al. Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition[J]. VACUUM,2015,119(2015):63e67. |
APA | Junyan Jiang.,Yuantao Zhang.,Fan Yang.,Zhen Huang.,Long Yan.,...&Guotong Du.(2015).Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition.VACUUM,119(2015),63e67. |
MLA | Junyan Jiang,et al."Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition".VACUUM 119.2015(2015):63e67. |
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Study of N-polar GaN(1285KB) | 限制开放 | License | Application Full Text |
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