| Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition | |
| Junyan Jiang; Yuantao Zhang; Fan Yang; Zhen Huang; Long Yan; Pengchong Li; Chen Chi; Degang Zhao; Baolin Zhang; Guotong Du | |
| 2015 | |
| Source Publication | VACUUM
 |
| Volume | 119Issue:2015Pages:63e67 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2016-03-23 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26762 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Junyan Jiang,Yuantao Zhang,Fan Yang,et al. Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition[J]. VACUUM,2015,119(2015):63e67. |
| APA | Junyan Jiang.,Yuantao Zhang.,Fan Yang.,Zhen Huang.,Long Yan.,...&Guotong Du.(2015).Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition.VACUUM,119(2015),63e67. |
| MLA | Junyan Jiang,et al."Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition".VACUUM 119.2015(2015):63e67. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Study of N-polar GaN（1285KB） | 限制开放 | License | Application Full Text | |||
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