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Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers
J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; L.C. Le; X.G. He; X.J. Li; H. Yang; Y.T. Zhang; G.T. Du
2015
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
Volume635Issue:2015Pages:82–86
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26760
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
J. Yang,D.G. Zhao,D.S. Jiang,et al. Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2015,635(2015):82–86.
APA J. Yang.,D.G. Zhao.,D.S. Jiang.,P. Chen.,J.J. Zhu.,...&G.T. Du.(2015).Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers.JOURNAL OF ALLOYS AND COMPOUNDS,635(2015),82–86.
MLA J. Yang,et al."Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers".JOURNAL OF ALLOYS AND COMPOUNDS 635.2015(2015):82–86.
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